Defect inspection system

ABSTRACT

In a defect inspection system using a plurality of detectors such as an upright detector and an oblique detector, if illumination light and wafer height are adjusted to the detection field of view of one detector, a defocused image is detected by other remaining detectors, resulting in degradation of the detection sensitivity. The present invention solves this problem. 
     When a plurality of detectors such as an upright detector and an oblique detector are used in the defect inspection system, the reduction of the inspection sensitivity can be prevented by correcting the field positions of the other remaining detectors with respect to the field of view of the one detector. Further, the variation in optical axis for each inspection system due to the variation in parts and assembly errors can be reduced.

RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.12/335,173, filed on Dec. 15, 2008, now U.S. Pat. No. 7,872,743,claiming priority of Japanese Application No. 2007-327816, filed on Dec.19, 2007, the entire contents of each of which are hereby incorporatedby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a defect inspection system whichinspects a defect such as a particle in an object under inspection, andparticularly to a defect inspection system suitable for inspectionprocess of a substrate with a pattern, such as a semiconductor wafer,liquid crystal display, and the like.

2. Description of the Related Art

If particles are present on the surface of a substrate in the process ofmanufacturing a semiconductor device, liquid crystal display, or thelike, failures such as short circuit and inferior insulation will takeplace therein. Causes by which particles are generated include dust thatoccurs from equipment, the human body, and process gas and othermaterials.

With the increasing miniaturization in semiconductor process, theminuteness of a defect that will cause failures is also remarkable andaccordingly defect detection with higher accuracy is requested.

Recent years have seen a trend of an increase in the use of multilayerwafers because of higher integration of semiconductors. A multilayerwafer is manufactured by repeating a process of forming a transparentthin film such as an oxide film on a substrate and a process of forminga circuit pattern on the film. For this reason, the need for detectionof particles and defects on the surface of the transparent thin film hasbeen important in the field of defect inspection on a wafer.

In order to meet this demand, JP-A-2007-107960 discloses a technique forreducing scattered light from a transparent thin film base pattern usinga low-elevation-angle detector in addition to a detector installed in adirection perpendicular to the wafer, used in common dark-fieldinspection systems, to thereby improve the detection sensitivity.

Likewise, JP-A-2007-33433 also discloses a detection technique using alow-elevation angle as detection angle to reduce unevenness inbrightness of scattered light from a wafer.

With the above-mentioned techniques, both a low-elevation-angle detectorand a perpendicular detector can be used at the same time, thus enablingdefect detection with high sensitivity using a plurality of defectsignals.

SUMMARY OF THE INVENTION

However, when a wafer height is aligned with an illumination positionwith respect to an upright detector at the time of adjustment of adetection field of view, the focus of other remaining detectors is notilluminated possibly resulting in degradation of the detectionsensitivity.

The present invention has been devised in view of the above-mentionedsituation. The present invention provides a defect inspection systemwhich, when a plurality of detectors are used, corrects a position atwhich a sensor is located and makes the focal positions of thesedetectors coincide with each other, thus preventing the detectionsensitivity from degrading.

In order to solve the above-mentioned problem, the present inventionincludes a plurality of detectors having optical axes which are mutuallydifferent for a sample, wherein at least one detector is provided with amechanism for correcting a position at which a sensor is located. Thedefect inspection system estimates an appropriate imaging position withrespect to the wafer height and illumination position and moves thesensor to prevent the detection sensitivity from degrading. The sensorposition may be corrected separately according to the magnification,illumination conditions, and the like.

For example, if the distance between the sample and the sensor isadjusted in one of the plurality of detectors, sensors of otherremaining detectors are moved to correct imaging position shift.

According to one aspect of the present invention, a defect inspectionsystem for inspecting a defect in a sample, the system comprises: astage on which the sample is moved; an illumination optical system forirradiating a surface of the sample with a testing illumination lightbeam having a predetermined incident angle with respect to the samplesurface to generate a beam spot on the sample surface; an obliquedetector including a first sensor having a first optical axis inclinedwith respect to the sample surface by a predetermined angle to detectlight from the beam spot, and a sensor movement device which moves thefirst sensor; an upright detector including a second sensor having asecond optical axis along the normal of the sample surface to detectlight from the beam spot; and a signal processor including a processingcontroller to detect a defect on the sample using outputs from theoblique detector and the upright detector. The processing controllercontrols the stage to move the sample in the second optical axisdirection to adjust the focal length of the upright detector. Theprocessing controller controls the sensor movement device according tothe amount of movement of the sample to move the position of the firstsensor in the oblique detector.

Preferably, the processing controller calculates the coordinate (xs1,zs1) of a defect in the xz coordinate system of the oblique detectorusing the following formulas:xs1=x0·cos β+z0·sin βzs1=−x0·sin β+z0·cos βand controls the sensor movement device so that the first sensor isdisposed at an imaging position associated with the coordinate (xs1,zs1) of the defect,where the coordinate of the defect before the sample is moved is (0, 0),the coordinate of the defect in the xz coordinate system of the uprightdetector is (x0, z0), the coordinate of the defect in the oblique xzcoordinate system of the oblique detector is (xs1, zs1), and the obliqueangle of the oblique detector is β.

Further features of the present invention will become apparent fromdetailed descriptions of the preferred embodiments and accompanyingdrawings.

The present invention makes it possible to use differences in focalpositions of detectors as suitable light-receive conditions bycorrecting the position of a light-receive system, thus preventing theinspection sensitivity from degrading and accordingly attaining stableinspection.

Further, according to the present invention, the effects of correctingthe variation in parts, assembly errors, etc. in each defect inspectionsystem can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects and advantages of the invention will become apparent fromthe following description of embodiments with reference to theaccompanying drawings in which:

FIG. 1 shows the schematic configuration of a defect inspection systemaccording to an embodiment of the present invention;

FIG. 2 explains three different testing illumination light beamsgenerated by an illumination optical system of the defect inspectionsystem;

FIGS. 3A and 3B show an optical system which includes an illuminationlens of the illumination optical system of the defect inspection system;

FIG. 4 shows the operation of the illumination lens of the illuminationoptical system of the defect inspection system;

FIG. 5 explains an example of the structure of three beam-spot imagingunits formed in the illumination optical system of the defect inspectionsystem;

FIG. 6 shows the structure of an oblique detector in the defectdetection system;

FIG. 7 shows a relation between an upright detector and an obliquedetector in the defect detection system;

FIG. 8 shows a relation between the coordinate system in the defectdetection system and an oblique coordinate system; and

FIG. 9 is a flow chart for explaining the processing for correcting thesensor position of the oblique detector in the defect detection system.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

An embodiment of the present invention will be explained below withreference to the accompanying drawings. While the present embodiment ismerely an example for attaining the present invention, it should benoted that the present embodiment does not limit the technical scope ofthe present invention. In each drawing, elements having the samefunction are assigned the same symbol.

(1) Configuration of the Defect Inspection System

FIG. 1 shows the schematic configuration of the defect inspection systemaccording to the embodiment of the present invention. Referring to FIG.1, the defect inspection system includes: a stage system 300 which movesa sample such as a wafer in the x, y, and z directions and around the zaxis; an illumination optical system 100 which irradiates the samplewith a testing illumination light beam; an upright detector 200 whichdetects scattered light from the sample; an oblique detector 500 whichdetects scattered light from the sample; and a control system 400 whichperforms calculation processing, signal processing, and the like.

The stage system 300 includes an x stage 301, a y stage 302, a z stage303, a rotation stage 304, and a stage controller 305.

The illumination optical system 100 includes a laser light source 101; abeam expander composed of a concave lens 102 and a convex lens 103; abeam trimming unit composed of an optical filter group 104 and a mirror105; and three beam-spot imaging units 110, 120, and 130. The beam-spotimaging unit 110 includes an optical branch element (or mirror) 106, anillumination lens 107 having a conic curved surface, and mirrors 108 and109. An optical filter group 104 includes an ND filter and a wavelengthplate.

Although it is preferable to use the third harmonic (THG), having awavelength of 355 nm, of high-power YAG laser as the laser light source101, the wavelength is not necessary 355 nm, nor the laser light source101 necessarily be YAG or THG. That is, the laser light source 101 maybe Ar laser, nitrogen laser, He—Cd laser, excimer lasers, or the like.

The upright detector 200 includes a detection lens 201, a spatial filter202, an imaging lens 203, a zoom lens group 204, a one-dimensionalsensor (image sensor) 205, a spatial filter control 207, and a zoom lenscontrol 208. The oblique detector 500 includes a one-dimensional sensor(image sensor) 501, an objective lens 502, a spatial filter 503, and animaging lens 504. A one-dimensional sensor 205 may be a TDI (time delayintegration) sensor.

The control system 400 includes a calculation and processing unit(processing controller) 401, a signal processing unit 402, an outputunit 403, and an input unit 404. The calculation and processing unit 401includes a CPU or the like to drive a motor or the like and control thecoordinates and sensors. The signal processing unit 402 includes an A/Dconverter, a delayable data memory, a difference processing circuitwhich takes a difference between chip signals, a memory unit whichtemporarily stores the chip differential signal, a threshold valuecalculation and processing unit which sets a pattern threshold value,and a comparator circuit.

The output unit 403 stores a result of defect detection such as particledetection, and outputs or displays the result of defect detection. Usingthe input unit 404, a command and data from the user are input.

A coordinate system 330 is shown at the bottom left of FIG. 1, where thex and y axes are taken on a plane (xy plane) and the z axis is takenperpendicularly to the xy plane. In this case, the optical axis of theupright detector 200 is disposed along the z axis while the optical axisof the oblique detector 500 is disposed on the xz plane.

(2) Configuration of the Illumination Optical System

Referring to FIG. 2, the three beam-spot imaging units 110, 120, and 130of the illumination optical system 100 will be explained below withreference to FIG. 2. FIG. 2 shows a sample (substrate) 1 or a waferviewed from the top. A testing illumination light beam 11 is irradiatedin the x-axis direction through a first beam-spot imaging unit 110. Atesting illumination light beam 12 is irradiated in a direction inclinedwith respect to the y axis by an angle of −45 degrees through a secondbeam-spot imaging unit 120. A testing illumination light beam 13 isirradiated in a direction inclined with respect to the y axis by anangle of 45 degrees through a third beam-spot imaging unit 130. Anoblique detector 500 is disposed on the side opposite to the firstbeam-spot imaging unit 110.

The testing illumination light beams 11, 12, and 13 are obliquelyirradiated forming a predetermined angle α with respect to the surfaceof the substrate (sample) 1. In particular, the amount of detectedscattered light from a transparent thin film undersurface can be reducedby decreasing the elevation angle α of the testing illumination lightbeam 12 and 13.

These testing illumination light beams 11, 12, and 13 form an elongatedbeam spot 3 on the substrate (sample) 1. The beam spot 3 extends alongthe y-axis direction. The length of the beam spot 3 along the y-axis islarger than a detection field of view 250 of the one-dimensional sensor205 of the upright detector 200.

The reason why the three beam-spot imaging units 110, 120 and 130 areprovided in the illumination optical system 100 will be explained below.When the testing illumination light beams 12 and 13 projected on the xyplane form angles Φ1 and Φ2, respectively, with respect to the x axis, acondition Φ1=Φ2=45 is satisfied in the present embodiment. This makes itpossible to prevent the 0th-order diffracted light from a non-repetitivepattern on the substrate 1 from being incident on the objective lens 201of the upright detector 200. The reason is described in detail in U.S.Pat. No. 3,566,589 and therefore omitted herein.

The non-repetitive pattern on the substrate 1 is mainly composed oflinear patterns formed in parallel and perpendicularly with each other.These linear patterns extend along the x- or y-axis direction. Since thepatterns on the substrate 1 are protruded therefrom, a concave portionis formed between adjacent linear patterns. Therefore, the testingillumination light beams 12 and 13 irradiated from directions inclinedwith respect to the x and y axes, respectively, by an angle of 45degrees are intercepted by protruded circuit patterns, and therefore aconcave portion between linear patterns cannot be irradiated.

Therefore, the beam-spot imaging unit 110 is provided to generate thetesting illumination light beam 11 which is along the x-axis direction.A concave portion between linear patterns can be irradiated with thetesting illumination light beam 11, making it possible to detect adefect such as a particle existing the concave portion. Depending on thedirection of linear patterns, the sample is rotated 90 degrees beforeinspection or the testing illumination light beam 11 is radiated in they-axis direction.

When a light beam, for example the testing illumination light beam 11,is radiated in the x-axis direction onto a concave portion betweenlinear patterns, it is necessary to intercept the 0th-order diffractedlight so that the sensor may not detect the 0th-order diffracted light.The spatial filter 202 is provided for this purpose.

A method for forming the elongated beam spot 3 will be explained belowwith reference to FIGS. 3A, 3B, and 4. FIGS. 3A and 3B show only thelaser light source 101, the concave lens 102, the convex lens 103, andthe illumination lens 104 of the illumination optical systems 100, andother components 105, 106, 107, 108, and 109 are omitted to facilitateunderstanding essential configuration.

The illumination lens 104 is a cylindrical lens having a conic curvedsurface, and the focal length linearly changes in the longitudinaldirection, as shown in FIG. 3A. The illumination lens 104 has a crosssection of a flat convex lens as shown in FIG. 3B. The illumination lens104 can deflect in the y-axis direction even an illumination light beamobliquely incident on the substrate (sample) 1 to generate the slit-likebeam spot 3 collimated in the x-axis direction, as shown in FIG. 4. Thetesting illumination light beam 11 forms an angle α1 with respect to thesurface of the substrate (sample) 1. The testing illumination light beam11 projected on the substrate (sample) 1 forms an angle Φ1 with respectto the x axis.

The use of such illumination lens 104 attains illumination havingparallel light in the x direction and the angle Φ1 of around 45 degrees.A method for manufacturing the illumination lens 104 having a coniccurved surface is described in U.S. Pat. No. 3,566,589, and thereforethe explanation is omitted herein.

(3) Configuration for Attaining Three Beam Spots

An example structure of the three beam-spot imaging units 110, 120 and130 of the illumination optical system 100 will be explained below withreference to FIG. 5. The laser beam emitted from the laser light source101 is branched into two optical paths (light beams) by a first branchoptical element 141 such as a half mirror. One branch light beamreflects off mirrors 142 and 143 and then enters a concave lens 144constituting the first beam-spot imaging unit 110 to generate theillumination light beam 11 from the first beam-spot imaging unit 110.The other branch light beam is further branched into two optical paths(light beams) by a second branch optical element 145 such as a halfmirror. One branch light beam reflects off a mirror 146 and then entersa concave lens 147 constituting the second beam-spot imaging unit 120 togenerate the illumination light beam 12 from the second beam-spotimaging unit 120. The other branch light beam enters a concave lens 148constituting the third beam-spot imaging unit 130 to generate theillumination light beam 13 from the third beam-spot imaging unit 130.

When the first branch optical element 141 is removed or replaced with apass-through optical element 141 a, the illumination light beam 11 fromthe first beam-spot imaging unit 110 is not generated. Specifically,only the illumination light beam 12 from the second beam-spot imagingunit 120 and the illumination light beam 13 from the third beam-spotimaging unit 130 are generated. When the first branch optical element141 is removed or replaced with the pass-through optical element 141 aand further the second branch optical element 145 is replaced with amirror 145 a, only the illumination light beam 13 from the thirdbeam-spot imaging unit 130 is generated. When the first branch opticalelement 141 is removed or replaced with the pass-through optical element141 a and further the second branch optical element 145 is removed orreplaced with a pass-through optical element, only the illuminationlight beam 12 from the second beam-spot imaging unit 120 is generated.

When the first branch optical element 141 is disposed and the secondbranch optical element 145 is replaced with the mirror 145 a, only theillumination light beam 11 from first beam-spot imaging unit 110 and theillumination light beam 13 from third beam-spot imaging unit 130 aregenerated. When the first branch optical element 141 is disposed and thesecond branch optical element 145 is removed or replaced with anpass-through optical element, only the illumination light beam 11 fromthe first beam-spot imaging unit 110 and the illumination light beam 12from the second beam-spot imaging unit 120 are generated.

In this way, the present embodiment can generate any one of theillumination light beams 10, 11, and 12 from the three beam-spot imagingunits 110, 120 and 130, respectively.

(4) Upright Detector

The upright detector 200 will be explained below. When the substrate(sample) 1 is radiated with a testing illumination light beam and theslit-like beam spot 3 is generated, a reflection light beam containingscattered light is emitted. This output light beam is emitted from thetransparent thin film top surface, undersurface, and a circuit pattern,and a defect such as a particle on the substrate. The output lightpasses through the detection lens 201, the spatial filter 202, and theimaging lens 203 of the upright detector 200, and then is received bythe sensor 205 to be subjected to photoelectric conversion therein. Theluminance (power) of a light flux from the laser light source 101 can bechanged through control of an ND filter 104 or the laser power, makingit possible to change the dynamic range of the output of the sensor 205.

(5) Spatial Filter

The spatial filter 202 will be explained below. When a repetitivepattern on the sample is radiated with a testing illumination lightbeam, a diffracted-light strip (diffracted interference light strip) isgenerated. If the diffracted-light strip is received by the sensor 205,an error signal is generated making it impossible to detect a defectsuch as a particle. In order to intercept a Fourier transform imagecaused by the diffracted light from the repetitive pattern, the spatialfilter 202 is disposed in a spatial frequency region of the objectivelens 201, i.e., at an imaging position of Fourier transform (equivalentto an emission iris).

Normally, a light-shielding pattern of the spatial filter 202 is set soas to eliminate the diffracted light from a frequent repetitive pattern.The spatial filters 202 described in JP-A-5-218163 and JP-A-6-258239include a structure that allows the light-shielding pattern to bechanged. A plurality of different light-shielding patterns may beprepared as the spatial filter 202. In any case, the diffracted lightcan be intercepted by changing or switching the light-shielding patternaccording the circuit pattern.

As mentioned above, when a concave portion between linear patterns isirradiated with the testing illumination light beam 11 which is alongthe x-axis direction, it is necessary to intercept the 0th-orderdiffracted light by using the spatial filter 202. The spatial filter 202may be configured to intercept not only the 0th-order diffracted lightbut also a high-order diffracted light be intercepted.

(6) Adjustment of the Detection Sensitivity in the Upright Detector

A method for adjusting the detection sensitivity in response to the sizeof a defect such as a particle to be detected will be explained below.When the pixel size on the substrate (sample) 1 of the one-dimensionalsensor (image sensor) 205 such as a TDI sensor is decreased, a smallerdefect such as a particle can be detected although throughput isdegraded. Three different detectors 200 are provided to attain variableimage size on the substrate (sample) with respect to the pixel of theone-dimensional sensor (image sensor) 205. For example, in order todetect a defect such as a particle having a size of about 0.1micrometers or less, the detector 200 which decreases the pixel size onthe substrate (sample) 1 is selected. As a method for attaining such aconfiguration, an appropriate lens in a lens group 204 is selected. Forexample, it is preferable to design the lenses configuration so that thelength of the optical path from the substrate (sample) 1 to theone-dimensional sensor 205 such as a TDI sensor remains unchanged. Whendesigning of lenses configuration is difficult, it is possible, ofcourse, along with the above-mentioned lens switching, to use amechanism which can change the distance to the sensor. It is alsopossible to select an appropriate sensor different in pixel size fromthe other.

(7) Oblique Detector

Then, the oblique detector 500 will be explained below with reference toFIG. 6. The optical axis of the oblique detector 500 is inclined withrespect to the sample surface by a predetermined angle β. As describedin JP-A-2007-107960, in order to reduce the amount of scattered lightdetected from the undersurface of the transparent thin film, it isnecessary to arrange the optical axis of the oblique detector 500 so asto detect an output light having an output angle ranging from about 80to about 90 degrees.

The light from a slit-like beam spot formed on the sample passes throughthe objective lens 502, the spatial filter 503, and the imaging lens504, and then is detected by the one-dimensional sensor (image sensor)501. The present embodiment uses a one-dimensional sensor (image sensor)in order to detect the image of the slit-like beam spot. The spatialfilter 503 intercepts the diffracted-light strip (diffractedinterference light strip) from the repetitive pattern on the sample inthe same way as the spatial filter 202 of the upright detector 200.

The optical axis of the oblique detector 500 is inclined with respect tothe wafer surface by an elevation angle β. Then, a coordinate system fordescribing the oblique detector 500 will be defined. The above-mentionedcoordinate system is rotated counterclockwise around the y axis in thexz plane, which is defined as an oblique coordinate system 530 havingthe xs, ys, and zs axes. The ys axis is perpendicular to the papersurface and therefore not shown. The oblique coordinate system 530 isshown in FIG. 6. According to the oblique coordinate system 530, themain optical axis of the detector 500 is in parallel with the xs axis,and the longitudinal direction of the one-dimensional sensor 501 is inparallel with the ys axis.

The one-dimensional sensor 501 is driven by single-axis stages 541 and542 which move in the xs- and zs-axis directions, respectively, in theoblique coordinate system 530. These single-axis stages 541 and 542 arecontrolled by a stage controller 540.

(8) Correcting the Detection Sensitivity of the Oblique Detector

A beam irradiation position 600 (equivalent to the beam spot 3 of FIG.2) is detected by a beam position sensor 211 provided in the uprightdetector 200 as shown in FIG. 7. The sensor 211 is a CCD sensoroptically having the same imaging position as the one-dimensional sensor205 by use of, an optical branch element 212 (or mirror) such as a halfmirror. The sensor 211 is used to ensure that the beam be appropriately,applied within the field of the one-dimensional sensor 205. This makesit possible to obtain the x coordinate (in the coordinate system 330) ofthe illumination position of the beam to the wafer. The sensor 211 maybe not only a CCD sensor but also a 2D sensor or a one-dimensionalsensor arranged so as to obtain the beam position.

The reason for the degradation of the detection sensitivity of theoblique detector 500 will be explained below. In the upright detector200, the focal length of the objective lens changes due to changing oftemperature or atmospheric pressure. Accordingly, the wafer height ischanged to correct the focal length. When the wafer height and the beamillumination position 600 are moved so as to be aligned with the fieldof view 250 of the upright detector 200 (overlapped with the beamirradiation position) in this way, a gap arises between the detectionfield of view 550 of the oblique detector 500 and the detection field ofview 250 of the upright detector 200. Because of the above alignment,the imaging position of the scattered light from the wafer in theoblique detector 500 deviates from the position of the one-dimensionalsensor 501, as shown in FIG. 7, resulting in detection of a defocusedimage and degraded detection sensitivity. Specifically, since thescattered light is detected by the oblique detector 500, the image atwhich the beam is irradiated is imaged.

As mentioned above, a defect inspection system using a plurality ofdetectors has a problem such that, when a position of an object to betested is aligned with the inspection field of view of one detector, thedetection sensitivity of other remaining detectors is degraded.

With the present embodiment, if the position of the one-dimensionalsensor 501 of the oblique detector 500 is moved so that the detectionfield of view 250 coincides with the detection field of view 550, thescattered light from the wafer is appropriately imaged on theone-dimensional sensor 501, thus preventing the detection sensitivityfrom degrading. Although it is desirable that the detection field ofview 250 completely coincides with the detection field of view 550, anappropriate permissible value can be provided depending on the pixelsize of the one-dimensional sensor 550 and the one-dimensional sensor250 and on the focal depth of the upright detector 200 and obliquedetector 500.

The above will be reconsidered with reference to coordinate systems. Asshown in FIG. 8, an appropriate particle position when theone-dimensional sensor is disposed at its original position is definedas an origin (0,0). At this time, the coordinate (in the coordinatesystem 330) of an illuminated particle when the wafer height or theillumination position is changed due to the above-mentioned reason isdefined as (x0, z0). If the coordinate (in the oblique coordinate system530) of the particle is defined as (xs1, zs1), the following formulas(1) and (2) are obtained through simple coordinate conversion as shownin FIG. 8.xs1=x0·cos β+z0·sin β  (1)zs1=−x0·sin β+z0·cos β  (2)

When the single-axis stage 541 and 542 are driven to move theone-dimensional sensor 501 in accordance with the coordinate (in theoblique coordinate system 530) of the particle obtained by the formulas(1) and (2), an image of the particle in focus can be detected, thuspreventing the defect detection sensitivity from degrading.

Further, correction of detection sensitivity may be performed even if anerror arises for each condition by correcting the detection sensitivityfor each condition such as the magnification of the optical system, theelevation angle of illumination, and the like.

The defect inspection system of the present embodiment is applicablealso to a method for reducing machine-to-machine difference.Specifically, when the detection field of view 250 does not coincidewith the detection field of view 550 or when a positional variationarises for each inspection condition, because of differences in opticalcharacteristics between the upright detector 200 and the obliquedetector 500 or differences between parts, machine-to-machine differencecan be corrected by adjusting the positions of the above-mentioneddetectors.

Although the present embodiment is provided with two detectors, theupright detector and the oblique detector, the present invention is notlimited thereto and a plurality of oblique detectors may be installed.Even in a case where a plurality of oblique detectors are provided,correction of the imaging position in all the oblique detectors may beperformed according to the amount of movement of the wafer by adjustingthe height of the substrate (wafer) 1 to adjust the detection field ofview of the upright detector.

Further, it is not necessary that the optical axis of the uprightdetector exists on the normal line of the substrate (wafer) 1.Specifically, when the imaging position of one detector in a pluralityof detectors is adjusted, if the imaging positions of other remainingdetectors shift by the imaging position adjustment, the imagingpositions of the other remaining detectors are relatively adjusted inrelation to the amount of adjustment of the one detector. The amount ofrelative adjustment is calculated based on the same concept as informulas (1) and (2).

(9) Concrete Method for Attaining Sensor Position Correction

A flow of positional correction of the one-dimensional sensor 501 willbe explained below. FIG. 9 is a flow chart for explaining positionalcorrection processing of the one-dimensional sensor 501.

Firs, in Step S1, the calculation and processing unit 401 determinesinspection conditions such as the magnification of detectors, theelevation angle of the illumination system, and the like. For example,the calculation and processing unit 401 obtains from a memory (notshown) inspection conditions associated with a desired throughput value,the wafer type, etc., which are input from the input unit 404.

In Step S2, the calculation and processing unit 401 determines theheight of the wafer 1 in relation to the upright detector 200 to copewith the variation in the focal length of the upright detector 200. Atthis time, the wafer height is detected as z0 by the calculation andprocessing unit 401.

In Step S3, the optical branch element 212 and a sensor 211 detect thebeam illumination position 600 on the wafer 1. The calculation andprocessing unit 401 obtains information about the detected beamirradiation position 600. At this time, the beam irradiation position600 is detected as x0 by the calculation and processing unit 401.

In Step S4, the calculation and processing unit 401 corrects theposition of the one-dimensional sensor 501 based on x0 and z0 obtainedin Steps S3 and S2, respectively. Specifically, the calculation andprocessing unit 401 calculates the positions xs1 and zs1 to becorrected, using the formulas (1) and (2), and then moves the sensorposition by means of the single-axis stages 541 and 542 to correct theposition of the one-dimensional sensor 501.

When the above processing is performed, the sensor positions can beappropriately corrected for each inspection condition, thus preventingthe detection sensitivity of the oblique detector 500 from degrading.Further, the effect of reducing machine-to-machine difference caused byan optical system having variation for each machine is also enhanced.

It may also possible to adjust the sensor position of the uprightdetector in relation to the focal position of the oblique detector.

In accordance with the defect inspection system of the presentinvention, making a detection field of view of one detector coincidewith a detection field of view of the other detector, thus preventingthe defect detection sensitivity from degrading.

While the invention has been described in its preferred embodiments, itis to be understood that the words which have been used are words ofdescription rather than limitation and that changes within the purviewof the appended claims may be made without departing from the true scopeand spirit of the invention in its broader aspects.

1. An inspection apparatus for detecting a defect of a sample, theapparatus comprising: an illumination optical system for irradiating asurface of the sample with illumination light; a first imaging systemfor forming a first image, the first imaging system including a firstobjective optical element, and a first sensor for detecting the firstimage; a second imaging system for forming a second image, the secondimaging system including a second objective optical element, and asecond sensor for detecting the second image; and an adjusting unitwhich: changes at least one of a first position of the first sensor anda second position of the second sensor, adjusts a first field of visionof the first imaging system to substantially coincide with a secondfield of vision of the second imaging system, or adjusts the secondfield of vision of the second imaging system to substantially coincidewith the first field of vision of the first imaging system, wherein: afirst position of the first objective optical element relative to thesample is spatially different from a second position of the secondoptical element relative to the sample, the first imaging system formsthe first image by using light passed through the first objectiveoptical element, the second imaging system forms the second image byusing light passed through the second objective optical element.
 2. Theinspection apparatus according to claim 1, wherein: the first imagingsystem has a first optical axis, and the second imaging system has asecond optical axis.
 3. The inspection apparatus according to claim 2,wherein the first optical axis inclines with respect to the surface ofthe sample with a first angle.
 4. The inspection apparatus according toclaim 3, wherein a second angle between the second optical axis and thesurface of the sample is larger than the first angle.
 5. The inspectionapparatus according to claim 4, wherein the second angle issubstantially perpendicular with respect to the surface of the sample.6. The inspection apparatus according to claim 1, wherein the adjustingunit moves the first sensor along the first optical axis.
 7. Theinspection apparatus according to claim 1, wherein the adjusting unitmoves the first sensor along a crossover direction with respect to thefirst optical axis.
 8. The inspection apparatus according to claim 1,wherein the adjusting unit moves the second sensor along the secondoptical axis.
 9. The inspection apparatus according to claim 1, whereinthe adjusting unit moves the second sensor along a crossover directionwith respect to the second optical axis.
 10. The inspection apparatusaccording to claim 1, wherein the adjusting unit implements the field ofadjustment, based on one or more inspection conditions.
 11. Theinspection apparatus according to claim 10, wherein one or more theinspection conditions includes at least one of: first magnification ofthe first imaging system, second magnification of the second imagingsystem, and elevation angle of the illumination system.
 12. Theinspection apparatus according to claim 10, further comprising: a stagesystem for moving the surface of the sample in at least one of the firstfield of vision and the second field of vision.
 13. The inspectionapparatus according to claim 12, wherein the illumination system formsan illumination area on the surface of the sample.
 14. The inspectionapparatus according to claim 13, wherein the illumination area is aline.
 15. The inspection apparatus according to claim 1, wherein: theillumination system forms an illumination area on the surface of thesample, and the illumination area is a line.
 16. The inspectionapparatus according to claim 1, wherein: the first objective opticalelement is a first objective lens, and the second objective opticalelement is a second objective lens.
 17. A method for detecting a defectof a sample, the method comprising steps of: irradiating a surface ofthe sample; forming a first image with a first imaging system having afirst objective optical element, the first imaging system forming thefirst image by using light passing through the first objective opticalelement; and forming a second image with a second imaging system havinga second objective optical element, the second imaging system formingthe second image by using light passing through the second objectiveoptical element; detecting the first image with a first sensor of thefirst imaging system; detecting the second image with a second sensor ofthe second imaging system adjusting at least one of a first position ofthe first sensor and a second position of the second sensor and either:adjusting a first field of vision of the first imaging system tosubstantially coincide with a second field of vision of the secondimaging system, or adjusting the second field of vision of the secondimaging system to substantially coincide with the first field of visionof the first imaging system, wherein a first position of the firstobjective optical element relative to the sample is spatially differentfrom a second position of the second optical element relative to thesample.
 18. The method according to claim 17, wherein: the first imagingsystem has a first optical axis, and the second imaging system has asecond optical axis.
 19. The method according to claim 18, wherein thefirst optical axis inclines with respect to the surface of the samplewith a first angle.
 20. The method according to claim 19, wherein asecond angle between the second optical axis and the surface of thesample is larger than the first angle.
 21. The method according to claim20, wherein the second angle is substantially perpendicular with respectto the surface of the sample.
 22. The method according to claim 17,wherein the adjusting step includes moving the first sensor along thefirst optical axis.
 23. The method according to claim 17, wherein theadjusting step includes moving the first sensor along a crossoverdirection with respect to the first optical axis.
 24. The methodaccording to claim 17, wherein the adjusting step includes moving thesecond sensor along the second optical axis.
 25. The method according toclaim 17, wherein the adjusting step includes moving the second sensoralong a crossover direction with respect to the second optical axis. 26.The method according to claim 17, wherein the adjusting step implementsthe field of adjustment based on one or more inspection conditions. 27.The method according to claim 26, wherein the one or more inspectionconditions includes at least one of: first magnification of the firstimaging system, second magnification of the second imaging system, andelevation angle of the illumination system.
 28. The method according toclaim 26, further comprising the step of: moving the surface of thesample with a stage system in at least one of the first field of visionand the second field of vision.
 29. The method according to claim 28,further comprising the step of: forming an illumination area on thesurface of the sample.
 30. The method according to claim 29, wherein theillumination area is a line.
 31. The method according to claim 17,further comprising the step of: forming an illumination area on thesurface of the sample, wherein the illumination area is a line.
 32. Themethod according to claim 17, wherein: the first objective opticalelement is a first objective lens, and the second objective opticalelement is a second objective lens.